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Magnetic microrobots are attractive tools for operation in confined spaces due to their small size and untethered wireless operation, particularly in biomedical and environmental applications. Over years of development, many microrobot fabrication methods have been developed; however, they typically require costly specialized physical vapor deposition (PVD) vacuum instrumentation and present homogeneity and conformality coating problems (especially in complex 3D structures). Herein, a solution‐based polydopamine (PDA)‐assisted electroless deposition method is developed to deposit a superparamagnetic nickel thin film on microrobots. The multilayered functional film design comprises PDA as an adhesive primer and reducing agent, silver nanoclusters as catalysts, and a nickel magnetic top film, all deposited in a batch solution‐based process on glass and 3D‐printed polymer substrates. This multilayer magnetic coating is implemented and demonstrated in three magnetic microrobot archetypes, including arbitrarily‐shaped active particles, microrollers, and helical swimming microrobots, each using distinct actuation working mechanisms. Due to the material‐independent interfacial adhesive properties of PDA, this multilayer functionalization strategy can open up new magnetic microrobot fabrication schemes with a broad compatibility with materials and structures (including complex 3D‐printed polymer microstructures) and without the need for and limitations of PVD coating approaches. 

Abstract High entropy oxides (HEOs) have garnered much interest due to their available high degree of tunability. Here, we study the local structure of (MgNiCuCoZn)_0.167(MnCr)_0.083O, a composition based on the parent HEO (MgNiCuCoZn)_0.2O. We synthesized a series of thin films via pulsed laser deposition at incremental oxygen partial pressures. X‐ray diffraction shows lattice parameters to decrease with increased pO₂ pressures until the onset of phase separation. X‐ray absorption fine structure shows that specific atomic species in the composition dictate the global structure of the material as Cr, Co, and Mn shift to energetically favorable coordination with increasing pressure. Transmission electron microscopy analysis on a lower‐pressure sample exhibits a rock salt structure, but the higher‐pressure sample reveals reflections reminiscent of the spinel structure. In all, these findings give a more complete picture of how (MgNiCuCoZn)_0.167(MnCr)_0.083O forms with varying initial conditions and advances fundamental knowledge of cation behavior in high entropy oxides. 

The development of high performance wide-bandgap AlGaN channel transistors with high current densities and reduced Ohmic losses necessitates extremely highly doped, high Al content AlGaN epilayers for regrown source/drain contact regions. In this work, we demonstrate the achievement of semi-metallic conductivity in silicon (Si) doped N-polar Al0.6Ga0.4N grown on C-face 4H-SiC substrates by molecular beam epitaxy. Under optimized conditions, the AlGaN epilayer shows smooth surface morphology and a narrow photoluminescence spectral linewidth, without the presence of any secondary peaks. A favorable growth window is identified wherein the free electron concentration reaches as high as ∼1.8 × 1020 cm−3 as obtained from Hall measurements, with a high mobility of 34 cm2/V·s, leading to a room temperature resistivity of only 1 mΩ·cm. Temperature-dependent Hall measurements show that the electron concentration, mobility, and sheet resistance do not depend on temperature, clearly indicating dopant Mott transition to a semi-metallic state, wherein the activation energy (Ea) falls to 0 meV at this high value of Si doping for the AlGaN films. This achievement of semi-metallic conductivity in Si doped N-polar high Al content AlGaN is instrumental for advancing ultrawide bandgap electronic and optoelectronic devices. 

Abstract Charge density waves are emergent quantum states that spontaneously reduce crystal symmetry, drive metal-insulator transitions, and precede superconductivity. In low-dimensions, distinct quantum states arise, however, thermal fluctuations and external disorder destroy long-range order. Here we stabilize ordered two-dimensional (2D) charge density waves through endotaxial synthesis of confined monolayers of 1T-TaS₂. Specifically, an ordered incommensurate charge density wave (oIC-CDW) is realized in 2D with dramatically enhanced amplitude and resistivity. By enhancing CDW order, the hexatic nature of charge density waves becomes observable. Upon heating via in-situ TEM, the CDW continuously melts in a reversible hexatic process wherein topological defects form in the charge density wave. From these results, new regimes of the CDW phase diagram for 1T-TaS₂are derived and consistent with the predicted emergence of vestigial quantum order. 

Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design device properties. For example, experiments have achieved 10 orders of magnitude longer retention times than predicted by current models. Here, using electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors, we reveal that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. This result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors. 

Abstract The presence of inclusions, twinning, and low-angle grain boundaries, demanded to exist by the third law of thermodynamics, drive the behavior of quantum materials. Identification and quantification of these structural complexities often requires destructive techniques. X-ray micro-computed tomography (µCT) uses high-energy X-rays to non-destructively generate 3D representations of a material with micron/nanometer precision, taking advantage of various contrast mechanisms to enable the quantification of the types and number of inhomogeneities. We present case studies of µCT informing materials design of electronic and quantum materials, and the benefits to characterizing inclusions, twinning, and low-angle grain boundaries as well as optimizing crystal growth processes. We discuss recent improvements in µCT instrumentation that enable elemental analysis and orientation to be obtained on crystalline samples. The benefits of µCT as a non-destructive tool to analyze bulk samples should encourage the community to adapt this technology into everyday use for quantum materials discovery. 

Abstract Entropic stabilization has evolved into a strategy to create new oxide materials and realize novel functional properties engineered through the alloy composition. Achieving an atomistic understanding of these properties to enable their design, however, has been challenging due to the local compositional and structural disorder that underlies their fundamental structure-property relationships. Here, we combine high-throughput atomistic calculations and linear regression algorithms to investigate the role of local configurational and structural disorder on the thermodynamics of vacancy formation in (MgCoNiCuZn)O-based entropy-stabilized oxides (ESOs) and their influence on the electrical properties. We find that the cation-vacancy formation energies decrease with increasing local tensile strain caused by the deviation of the bond lengths in ESOs from the equilibrium bond length in the binary oxides. The oxygen-vacancy formation strongly depends on structural distortions associated with the local configuration of chemical species. Vacancies in ESOs exhibit deep thermodynamic transition levels that inhibit electrical conduction. By applying the charge-neutrality condition, we determine that the equilibrium concentrations of both oxygen and cation vacancies increase with increasing Cu mole fraction. Our results demonstrate that tuning the local chemistry and associated structural distortions by varying alloy composition acts an engineering principle that enables controlled defect formation in multi-component alloys.